Mn-AlInN: a new diluted magnetic semiconductor
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Abstract
Mn ions have been incorporated into MOCVD grown Al1-xInxN/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∼260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas Tc above room temperature is assumed to be associated to the layer having higher Mn concentration.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mn-AlInN: a new diluted magnetic semiconductor</title><author><name sortKey="Majid, Abdul" uniqKey="Majid A">Abdul Majid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author><author><name sortKey="Sharif, Rehana" uniqKey="Sharif R">Rehana Sharif</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Engineering and Technology</s1><s2>Lahore</s2><s3>PAK</s3><sZ>2 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Lahore</wicri:noRegion></affiliation></author><author><name sortKey="Zhu, J J" uniqKey="Zhu J">J. J. Zhu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>3 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Ali, Akbar" uniqKey="Ali A">Akbar Ali</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Pakistan</country><wicri:noRegion>Islamabad</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0408752</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0408752 INIST</idno><idno type="RBID">Pascal:09-0408752</idno><idno type="wicri:Area/Main/Corpus">005009</idno><idno type="wicri:Area/Main/Repository">004F85</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Aluminium Indium Nitrides Mixed</term><term>Curie point</term><term>Epitaxial layers</term><term>Ferromagnetism</term><term>Impurities</term><term>Ion implantation</term><term>MOCVD</term><term>Magnetic transitions</term><term>Manganese additions</term><term>Optical transition</term><term>Saturation magnetization</term><term>Semimagnetic semiconductors</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Méthode MOCVD</term><term>Implantation ion</term><term>Ferromagnétisme</term><term>Transition magnétique</term><term>Point Curie</term><term>Impureté</term><term>Addition manganèse</term><term>Diffraction RX</term><term>Aimantation saturation</term><term>Aluminium Indium Nitrure Mixte</term><term>Spectre absorption</term><term>Transition optique</term><term>Semiconducteur semimagnétique</term><term>Couche mince</term><term>Couche épitaxique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Mn ions have been incorporated into MOCVD grown Al<sub>1-x</sub>In<sub>x</sub>N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∼260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T<sub>c</sub> above room temperature is assumed to be associated to the layer having higher Mn concentration.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0></fA01><fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0></fA03><fA05><s2>96</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mn-AlInN: a new diluted magnetic semiconductor</s1></fA08><fA11 i1="01" i2="1"><s1>MAJID (Abdul)</s1></fA11><fA11 i1="02" i2="1"><s1>SHARIF (Rehana)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHU (J. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>ALI (Akbar)</s1></fA11><fA14 i1="01"><s1>Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University</s1><s2>Islamabad</s2><s3>PAK</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Engineering and Technology</s1><s2>Lahore</s2><s3>PAK</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912</s1><s2>Beijing 100083</s2><s3>CHN</s3><sZ>3 aut.</sZ></fA14><fA20><s1>979-984</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194A</s2><s5>354000170843030260</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0408752</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. 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The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas T<sub>c</sub> above room temperature is assumed to be associated to the layer having higher Mn concentration.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70E50P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70E70A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>MOCVD</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Implantation ion</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Ion implantation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Ferromagnétisme</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Ferromagnetism</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Transition magnétique</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Magnetic transitions</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Point Curie</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Curie point</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Impureté</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Impurities</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Addition manganèse</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Manganese additions</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>XRD</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Aimantation saturation</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Saturation magnetization</s0><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Imanación saturación</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Aluminium Indium Nitrure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Aluminium Indium Nitrides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Transition optique</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Optical transition</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Transición óptica</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur semimagnétique</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semimagnetic semiconductors</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince</s0><s5>17</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Thin films</s0><s5>17</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Couche épitaxique</s0><s5>18</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Epitaxial layers</s0><s5>18</s5></fC03><fN21><s1>299</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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